SiC Power Device Foundry Market - Global Forecast 2026-2032

The SiC Power Device Foundry Market size was estimated at USD 1.95 billion in 2025 and expected to reach USD 2.08 billion in 2026, at a CAGR of 6.50% to reach USD 3.04 billion by 2032.

The power electronics industry is undergoing a profound transformation driven by the global shift toward electrification and renewable energy integration. Silicon carbide (SiC) devices, renowned for their superior voltage handling, thermal performance, and efficiency, have emerged as critical enablers in electric vehicles, smart grid systems, and high-performance data centers. This surge in adoption reflects an industry consensus that SiC technology can substantially reduce energy losses and improve system reliability compared to traditional silicon solutions, reinforcing its appeal across high-growth sectors.

Meanwhile, public and private stakeholders are mobilizing resources to fortify domestic semiconductor ecosystems. In December 2024, the Biden administration announced a Section 301 investigation targeting China’s foundational semiconductors, signaling heightened scrutiny of supply chain dependencies and an intent to strengthen U.S. manufacturing resilience. Concurrently, industry leaders are forging strategic partnerships and expanding capacity: STMicroelectronics’ joint venture with Sanan Optoelectronics in Chongqing exemplifies this outward-inward approach, ensuring localized production in key markets while leveraging global expertise.

As the silicon carbide foundry landscape evolves, decision-makers must navigate complex intersections of technology innovation, policy incentives, and shifting demand patterns. This executive summary provides a concise yet comprehensive exploration of the transformative forces, tariff impacts, segmentation intricacies, regional dynamics, and strategic considerations shaping the SiC foundry market today.

The silicon carbide foundry ecosystem is witnessing a series of breakthroughs that are redefining power device capabilities. Wafer size transitions, particularly the industry’s move to 8-inch substrates, are enabling economies of scale and driving down per-unit production costs. STMicroelectronics is at the forefront of this shift, constructing a state-of-the-art SiC wafer fab in Catania, Italy, slated for 2026 operation and leveraging SmartSiC technology to boost throughput and lower carbon footprint. Similarly, onsemi’s expansion of its Bucheon, South Korea facility to 8-inch production by 2025 underscores the accelerating global retooling toward larger wafer diameters and heightened efficiency.

Concurrently, device architecture innovations are unlocking new performance tiers. Trench and planar structures are being optimized for specific voltage classes, enabling manufacturers to tailor devices across a broad spectrum of applications-from low-voltage consumer electronics to ultra-high-voltage grid infrastructure. Advances in metallization, notably the integration of gold metallization for high-reliability and aluminum for cost-effective mass production, are empowering foundries to meet diverse customer requirements.

In parallel, the proliferation of targeted R&D consortia and pilot lines is bridging the gap between laboratory advances and commercial scalability. These collaborative initiatives, supported by grants under the CHIPS and Science Act, are expediting process development and qualification cycles, ensuring that next-generation SiC MOSFETs, JFETs, and Schottky diodes can enter volume production with reduced lead times. As these transformative shifts gain momentum, established and emerging foundry players are poised to capture new market territories and redefine the power electronics paradigm.

In 2025, the United States will more than double existing tariffs on semiconductor imports from China, raising levies on advanced chips to 50%, and target additional categories under Section 232 investigations with potential 25% duties on imports from East Asia. These cumulative measures are intended to foster domestic manufacturing capacity and reduce strategic dependencies, yet they also introduce cost headwinds for firms reliant on imported SiC substrates and wafers. The immediate effect has been an uptick in input costs for foundries sourcing raw materials from Chinese suppliers, prompting a reevaluation of procurement strategies and supply chain resilience.

Amid these policy shifts, industry stakeholders are confronting trade-off decisions between near-term cost pressures and long-term strategic autonomy. For consumption-intensive applications such as electric vehicles and renewable energy inverters, tariffs have translated into higher component prices, which in turn risk tempering adoption rates unless mitigated by downstream subsidies or volume-driven cost reductions. Meanwhile, foundries are accelerating domestic capacity expansions, benefiting from federal tax credits and grants designed to offset tariff impact and stimulate reshoring of critical semiconductor processes.

Looking ahead, the evolving tariff landscape underscores the importance of diversified manufacturing footprints. Companies that proactively balance onshore facility growth with strategic alliances in allied regions-while deploying advanced process controls to improve yield-will be best positioned to navigate these trade policy currents. As the U.S. seeks to protect its semiconductor leadership, the market will witness intensified investments in local SiC foundry infrastructure, elevating competitive dynamics and reinforcing the strategic value of supply chain agility.

A comprehensive understanding of the silicon carbide power device foundry segment demands a multi-dimensional analysis, beginning with device type. SiC MOSFETs, JFETs, and Schottky diodes each present unique performance trade-offs. MOSFETs have surged in importance for high-efficiency electric vehicle inverters, while JFETs offer robustness in specific high-temperature industrial applications. Schottky diodes, prized for their low forward voltage drop, remain critical in renewable energy inverters and telecom power supplies.

Voltage rating segmentation further refines market dynamics. Devices categorized under Less Than 600 V, spanning 200 V and 400 V classes, are predominantly deployed in consumer electronics and industrial drive systems. The 600 V to 1200 V range-including 650 V, 900 V, and 1200 V variants-commands broad adoption in electric vehicle traction inverters and solar power converters. Applications requiring Above 1200 V, specifically 1400 V and 1700 V, are increasingly vital for utility-scale energy storage and high-voltage industrial motor drives.

Wafer size is a key enabler of volume economics and throughput. Foundries supporting 100 mm and 150 mm formats suit niche, specialized applications, whereas 200 mm and emerging 300 mm lines yield superior capacity for mass market segments. Device structure choice-planar for mature, cost-effective lines and trench for advanced, low-loss designs-guides foundry process tool investments and yields optimization priorities.

Diverse metallization approaches, specifically aluminum for cost-sensitive high-volume production and gold for mission-critical, high-reliability applications, mirror the segmentation by application. Consumer electronics segments such as laptops, smartphones, and wearables rely on low-voltage, cost-efficient die; electric vehicles demand high-voltage, high-power modules; industrial drives encompass motor drives, robotics, and welding equipment; renewable energy spans hydro, solar, and wind power conversions; and telecom requirements include 5G infrastructure, data centers, and optical networks. End users across automotive, consumer electronics, energy and power, industrial, and telecommunications sectors all draw on this intricate segmentation matrix to align foundry capabilities with performance, cost, and reliability criteria.

Regional dynamics are reshaping the silicon carbide foundry market, beginning with the Americas. The U.S. CHIPS and Science Act and related federal incentives have catalyzed a wave of domestic capacity expansions, from Wolfspeed’s Mohawk Valley Fab and John Palmour center to onsemi’s upcoming enhancements in Bucheon. This localized investment strategy reduces reliance on imported substrates and supports strategic autonomy in high-growth applications such as electric vehicles and data center infrastructure.

Across Europe, Middle East, and Africa, the EU Chips Act has similarly galvanized commitment to semiconductor self-sufficiency. Yet, recent delays, such as Wolfspeed’s postponed Germany plant, underscore the challenges of aligning subsidies with commercial viability and regulatory approvals. Nonetheless, ongoing projects by STMicroelectronics in Catania and Infineon in Kulim reflect a concerted effort to diversify foundry networks and mitigate geopolitical risks in the silicon carbide value chain.

In the Asia-Pacific region, the combination of large domestic EV markets, robust industrial automation demand, and government support has positioned China, Japan, and South Korea as pivotal hubs for SiC foundry growth. STMicroelectronics’ 8-inch joint venture in Chongqing and ROHM’s Kunitomi plant illustrate the breadth of local investment, while the scaling of trench process expertise and wafer size transitions at onsemi’s Bucheon facility highlight the region’s dual focus on capacity and technology differentiation.

STMicroelectronics continues to lead the SiC power device market with a 32.6% share, capitalizing on its integrated approach from wafer production to device assembly. The company’s Italian wafer fab and Chinese joint venture with Sanan Optoelectronics underscore its commitment to global footprint diversification and vertical integration. ST’s SmartSiC technology platform further differentiates its offerings, delivering efficiency gains and carbon reduction benefits that resonate with environmentally conscious customers.

Onsemi’s rise to the second position reflects its focused expansion in automotive-grade SiC MOSFETs. The completion of 8-inch capacity upgrades at its Bucheon facility, coupled with the integration of substrates from acquired GTAT assets, has boosted output scalability. Onsemi’s EliteSiC series has secured key design wins in premium EV platforms, highlighting its capability to meet stringent automotive reliability standards.

Infineon’s automotive business has demonstrated robust momentum, exemplified by its recent design win for the Xiaomi SU7 electric sedan. Although Infineon lacks in-house SiC crystal growth, its diversified supplier strategy and strong system design expertise enable it to maintain a competitive edge, especially in high-volume consumer automotive segments. Its focus on modular power solutions aligns with growing demand for scalable and customizable inverters across EV and renewable energy applications.

Wolfspeed remains the premier supplier of SiC substrates and materials with first-mover advantage in 8-inch wafer capacity at the John Palmour center. However, idle capacity at the Mohawk Valley Fab and high initial startup costs pose financial challenges. Wolfspeed’s success in ramping JP plant production and advancing MVF commissioning will be critical in converting its material leadership into sustainable device revenue growth. Meanwhile, ROHM’s acquisition of the Kunitomi plant and strategic partnerships with automotive OEMs such as Mazda, Geely, and Vitesco Technologies reinforce its ambition to expand device production capabilities and accelerate the development of next-generation power modules.

To navigate the evolving silicon carbide foundry environment, industry leaders should prioritize strategic diversification of manufacturing footprints. Establishing pilot production lines in allied regions can mitigate geopolitical and tariff risks, while localized R&D centers accelerate process development cycles. By leveraging public incentives under the CHIPS and Science Act and similar EU programs, companies can leverage cost-sharing mechanisms to scale operations more sustainably.

Simultaneously, forging strategic partnerships across the value chain-such as epilayer suppliers, equipment vendors, and end-user integrators-can enhance technological prowess and speed market entry. Collaborative alliances enable shared investment in critical technologies like trench architectures and advanced metallization schemes, while ensuring access to emerging application segments ranging from telecom infrastructure to grid-scale energy storage.

Finally, industry players must integrate tariff scenario planning into their strategic roadmaps. Proactive supply chain optimization-through multi-sourcing agreements, near-shoring of key processes, and dual-certified wafer sourcing-will preserve cost competitiveness in the face of shifting trade policies. By maintaining agile operations and robust contingency strategies, organizations can sustain momentum in silicon carbide device adoption and secure long-term leadership in power electronics innovation.

The insights presented in this report arise from a rigorous research framework combining primary and secondary data. Primary inputs included in-depth interviews with technology experts, senior executives at leading foundries, and application engineers across automotive, renewable energy, and industrial sectors. Complementing these voices, a series of structured surveys captured end-user demand patterns and procurement preferences from system integrators and OEM decision-makers.

Secondary research encompassed a thorough review of corporate filings, technical white papers, patent landscapes, government policy statements, and reputable industry news outlets. Data triangulation techniques were applied to reconcile quantitative findings with qualitative insights, ensuring consistency and robustness. All projections and thematic interpretations were validated against market feedback loops, and reviewed by an advisory board of semiconductor subject-matter experts to uphold analytical integrity and actionable relevance.

The silicon carbide power device foundry landscape is defined by rapid technological innovation, shifting policy regimes, and evolving application demands. Transformative advancements in wafer scaling, device architectures, and metallization approaches are unlocking new efficiency frontiers, while strategic tariff measures and incentive programs are reshaping supply chain geographies and competitive alignments.

As major players expand capacity and diversify production footprints, and as segmentation dynamics across device type, voltage rating, and application categories become more nuanced, stakeholders must adopt integrated, agile strategies. By synthesizing insights on transformative shifts, tariff impacts, regional ecosystems, and company capabilities, this report illuminates the imperatives for securing leadership and driving sustained growth in power electronics markets.

For more detailed analysis and to gain a competitive edge in silicon carbide power device foundry strategies, reach out to Ketan Rohom, Associate Director of Sales & Marketing, who can guide you through the comprehensive market research report and tailor its insights to your organizational objectives. His expertise and personalized approach will ensure your team secures the actionable intelligence needed to navigate technological shifts, policy changes, and supply chain dynamics with confidence. Connect directly with Ketan Rohom to unlock the full potential of this definitive resource and drive your strategic initiatives forward without delay.